STABILITY OF ORIENTED SILICALITE-1 FILMS IN VIEW OF ZEOLITE MEMBRANE PREPARATION

Citation
Mj. Denexter et al., STABILITY OF ORIENTED SILICALITE-1 FILMS IN VIEW OF ZEOLITE MEMBRANE PREPARATION, Zeolites, 19(1), 1997, pp. 13-20
Citations number
24
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
01442449
Volume
19
Issue
1
Year of publication
1997
Pages
13 - 20
Database
ISI
SICI code
0144-2449(1997)19:1<13:SOOSFI>2.0.ZU;2-B
Abstract
Silicalite-1 is grown as b- and (a, b)-oriented monolayers on silicon wafers and on silicon wafers containing low-stress silicon nitride win dows, aiming at two new membrane systems. The orientation of crystals determines the stability (crack formation), due to tensile or compress ive stress, imposed on the layer after removal of the organic template . By application of etching procedures, the nitride support can be rem oved, leaving the crystal layer undamaged. The latter makes preparatio n of oriented and nonsupported thin layers for gas separation purposes possible. (C) Elsevier Science Inc. 1997.