A scanning tunneling microscope (STM) has been used to define features
having critical dimensions ranging from 0.05 to 5.0 mum within a self
-assembled monolayer resist of octadecyl mercaptan, HS(CH2)17-CH3, con
fined to a Au(111) surface. Low temperature chemical vapor deposition
(CVD) methods were used to metalize the STM-patterned surface with Cu.
At substrate temperatures near 120-degrees-C, the Cu CVD precursor, u
oroacetylacetonatocopper(I)-(1,5-cyclooctadiene), disproportionates to
deposit Cu on the STM-etched portion of the substrate, but not on the
unetched methyl-terminated monolayer resist surface. At substrate tem
peratures significantly above 120-degrees-C the degree of selectivity
is reduced, probably as a result of thermal desorption of the organome
rcaptan monolayer.