SCANNING PROBE LITHOGRAPHY .2. SELECTIVE CHEMICAL-VAPOR-DEPOSITION OFCOPPER INTO SCANNING TUNNELING MICROSCOPE-DEFINED PATTERNS

Citation
Jk. Schoer et al., SCANNING PROBE LITHOGRAPHY .2. SELECTIVE CHEMICAL-VAPOR-DEPOSITION OFCOPPER INTO SCANNING TUNNELING MICROSCOPE-DEFINED PATTERNS, Langmuir, 10(3), 1994, pp. 615-618
Citations number
46
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
07437463
Volume
10
Issue
3
Year of publication
1994
Pages
615 - 618
Database
ISI
SICI code
0743-7463(1994)10:3<615:SPL.SC>2.0.ZU;2-R
Abstract
A scanning tunneling microscope (STM) has been used to define features having critical dimensions ranging from 0.05 to 5.0 mum within a self -assembled monolayer resist of octadecyl mercaptan, HS(CH2)17-CH3, con fined to a Au(111) surface. Low temperature chemical vapor deposition (CVD) methods were used to metalize the STM-patterned surface with Cu. At substrate temperatures near 120-degrees-C, the Cu CVD precursor, u oroacetylacetonatocopper(I)-(1,5-cyclooctadiene), disproportionates to deposit Cu on the STM-etched portion of the substrate, but not on the unetched methyl-terminated monolayer resist surface. At substrate tem peratures significantly above 120-degrees-C the degree of selectivity is reduced, probably as a result of thermal desorption of the organome rcaptan monolayer.