GAS-SENSING MECHANISM OF PHTHALOCYANINE LANGMUIR-BLODGETT-FILMS

Authors
Citation
Hy. Wang et Jb. Lando, GAS-SENSING MECHANISM OF PHTHALOCYANINE LANGMUIR-BLODGETT-FILMS, Langmuir, 10(3), 1994, pp. 790-796
Citations number
18
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
07437463
Volume
10
Issue
3
Year of publication
1994
Pages
790 - 796
Database
ISI
SICI code
0743-7463(1994)10:3<790:GMOPL>2.0.ZU;2-P
Abstract
Gas-sensing properties of phthalocyanine [(C6H13)3SiOSiPcOGePcOH] Lang muir-Blodgett (L-B) films for halogen gases were investigated. The L-B films were deposited on silicon chips with a built-in microheater and a temperature-sensing diode for rapid control and monitoring of the s ensing film temperature. Sensitivities to Cl2, Br2, and I2 at various temperatures were studied. The temperature at peak sensitivity for Cl2 is 130-degrees-C, for Br2 is 60-degrees-C, and for I2 is 20-degrees-C . Sensors with different film thickness were fabricated and tested in Cl2 gas at room temperature. The results show that the conductivity ch ange arises from the both surface and bulk effects. An analytical mode l is proposed, considering the gas adsorption and desorption on the fi lm surface as rate processes and Fickian diffusion through the film, t o describe the behavior of the gas sensor. The model fits the experime ntal data.