Thin films of vanadium oxide have been prepared from an aqueous soluti
on system of (V2O5-HF aq.) with the addition of aluminium metal by a n
ovel wet-preparation process which is called liquid-phase deposition (
LPD). From X-ray diffraction measurements, the as-deposited film was f
ound to be amorphous and it was then crystallized to V2O5 by calcinati
on at 400 degrees C under an air flow. In contrast, the monoclinic VO2
phase was obtained when the deposited film was calcined under a nitro
gen atmosphere. The deposited film showed excellent adherence to the s
ubstrate and was characterized by a homogeneous flat surface. The depo
sited VO2 film exhibited a reversible semiconductor-metal phase transi
tion around 70 degrees C and its transition behaviour depended on the
way in which the film was prepared.