A NOVEL WET PROCESS FOR THE PREPARATION OF VANADIUM DIOXIDE THIN-FILM

Citation
S. Deki et al., A NOVEL WET PROCESS FOR THE PREPARATION OF VANADIUM DIOXIDE THIN-FILM, Journal of Materials Science, 32(16), 1997, pp. 4269-4273
Citations number
23
Categorie Soggetti
Material Science
ISSN journal
00222461
Volume
32
Issue
16
Year of publication
1997
Pages
4269 - 4273
Database
ISI
SICI code
0022-2461(1997)32:16<4269:ANWPFT>2.0.ZU;2-G
Abstract
Thin films of vanadium oxide have been prepared from an aqueous soluti on system of (V2O5-HF aq.) with the addition of aluminium metal by a n ovel wet-preparation process which is called liquid-phase deposition ( LPD). From X-ray diffraction measurements, the as-deposited film was f ound to be amorphous and it was then crystallized to V2O5 by calcinati on at 400 degrees C under an air flow. In contrast, the monoclinic VO2 phase was obtained when the deposited film was calcined under a nitro gen atmosphere. The deposited film showed excellent adherence to the s ubstrate and was characterized by a homogeneous flat surface. The depo sited VO2 film exhibited a reversible semiconductor-metal phase transi tion around 70 degrees C and its transition behaviour depended on the way in which the film was prepared.