DYNAMICAL SURFACE-STRUCTURE TRANSITIONS ON (001)INAS

Surface structure transitions on singular (001) InAs surface is studie d by using reflection high energy electron diffraction during molecula r beam epitaxy. Diffraction conditions sensitive to the changes in rec onstructions have been used for observations of the specular beam inte nsity. The kinetics of these transitions depending on the surface temp erature, the pressure of As-4 and the surface In-coverages has been in vestigated experimentally. A kinetic model of the transition from the (4 x 2) reconstruction with In-clusters to the same structure without In-clusters is proposed. The activation energy of As-4 desorption from the precursor state and that of the incorporation rate of As-4 into t he InAs lattice site are evaluated to be 0.15 eV and 1.9 eV, respectiv ely.