Low energy electron diffraction (LEED), Auger electron spectroscopy (A
ES) and scanning tunnelling microscopy (STM) have been used to study t
he evolution of the surface structure upon room temperature deposition
of In onto In-predeposited Si(lll)root 3x root 3-In surface. The sequ
ential formation of the Si(111)2x2 and Si(lll) root 7x root 3 surface
phases has been detected and coverage ranges of their existence have b
een determined. STM observations have revealed that the Si(111)2x2-In
phase has a honeycomb-like atomic structure with depressions in T-4 po
sitions. The structural model built of In trimers has been proposed.