INFLUENCE OF AMBIENT DIELECTRIC-PROPERTIES ON THE LUMINESCENCE IN QUANTUM WIRES OF POROUS SILICON

Authors
KASHKAROV PK KONSTANTINOVA EA PAVLIKOV AV TIMOSHENKO VY
Citation
Pk. Kashkarov et al., INFLUENCE OF AMBIENT DIELECTRIC-PROPERTIES ON THE LUMINESCENCE IN QUANTUM WIRES OF POROUS SILICON, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1-2, 1997, pp. 123-129
Citations number
12
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
1-2
Year of publication
1997
Pages
123 - 129
Database
ISI
SICI code
0204-3467(1997)1-2:<123:IOADOT>2.0.ZU;2-E
Abstract
The photoluminescence spectra of porous silicon with pores filled by b enzol, acetone, ethanol and methanol molecules have been investigated. The photoluminescence quenching caused by adsorption is found to incr ease for ambients with higher dielectric constants. The discussion of the results is based on the model of radiative recombination of excito ns in silicon nanostructures.