ON THE EQUILIBRIUM DISTRIBUTION OF BORON BETWEEN THE SURFACE AND BULKOF THE SILICON CRYSTAL

Authors
IPATOVA IP CHIKALOVALUZINA OP MARADUDIN AA
Citation
Ip. Ipatova et al., ON THE EQUILIBRIUM DISTRIBUTION OF BORON BETWEEN THE SURFACE AND BULKOF THE SILICON CRYSTAL, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 3-4, 1997, pp. 81-86
Citations number
8
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
3-4
Year of publication
1997
Pages
81 - 86
Database
ISI
SICI code
0204-3467(1997)3-4:<81:OTEDOB>2.0.ZU;2-H
Abstract
The temperature dependent contribution of the silicon lattice vibratio ns to the distribution coefficient of boron in the system silicon crys tal + boron surface phase is calculated. The realistic model of lattic e vibration of silicon is used. The effect of boron localized vibratio ns is taken into account. It is shown that the localized vibrations im pede the penetration of the boron atoms into the interior of the cryst al.