SCHOTTKY-BARRIER IN CONTACTS OF (ROOT-3X-ROOT-3)R30-DEGREES-CR SURFACE-STRUCTURES AND CRSI2(001) EPITAXIAL-FILMS WITH THE SI(111) SUBSTRATE

Authors
PLUSNIN NI MILENIN AP VELICHKO TV SOLDALOV VU
Citation
Ni. Plusnin et al., SCHOTTKY-BARRIER IN CONTACTS OF (ROOT-3X-ROOT-3)R30-DEGREES-CR SURFACE-STRUCTURES AND CRSI2(001) EPITAXIAL-FILMS WITH THE SI(111) SUBSTRATE, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 1-11
Citations number
27
Categorie Soggetti
Physics, Condensed Matter","Physics, Applied
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES → ACNP
ISSN journal
02043467
Volume
5-6
Year of publication
1997
Pages
1 - 11
Database
ISI
SICI code
0204-3467(1997)5-6:<1:SICO(S>2.0.ZU;2-0
Abstract
Investigated in this work are the current-voltage (I-V) characteristic s and photo-electric response for contacts formed by Si(111) substrate / (root 3 x root 3)R30 degrees-Cr surface structures and Si(111)/pseud omorphous and ultrathin epitaxial films of CrSi2(001). The Schottky ba rrier height, ideality factor, and series resistance of these contacts have been determined from the forward I-V plots. Obtained results rev eal the orientation dependence of the Schottky barrier height for pseu domorphous films of A and B type CrSi2 on Si(111) as well as the diffe rence between Schottky barrier types for contacts of (root 3 x root 3) R30 degrees-Cr surface structure and epitaxial silicide films with the Si(111) substrate.