EVALUATION OF COPPER CHEMICAL-VAPOR-DEPOSITION FILMS ON GLASS AND SI(100) SUBSTRATES

Thin films of pure copper have been deposited on glass and Si(100) sub strates using copper acetylacetonate [Cu(acac)2] and copper HexaFluoro Acetylacetonate [Cu(HFA)2] sources. A thermal, cold-wall, reduced pres sure (3325-5985 Pa) Metal-Organic Chemical Vapor Deposition (MOCVD) pr ocess was employed. The effect of H2O vapor on the grain size, deposit ion rate, and resistivity was examined. Electrical resistivities of 2. 4 muOMEGA cm for copper films deposited on Si(100) and 3.44 muOMEGA cm for copper films deposited on glass at substrate temperatures of 265- degrees-C and a [Cu(acac)2] source temperature of 147-degrees-C with t he use of H2O vapor were measured. When [Cu(HFA)2] was used, the subst rate temperature was 385-degrees-C and the source temperature was 85-d egrees-C. An activation energy for the copper film deposition process was calculated to be 22.2 kJ/mol in the case of the [Cu(acac)2] source . A deposition rate of 11 nm/min was obtained with Cu(acac)2 as the so urce and the rate was 44.4 nm/min with the Cu(HFA)2 source; both were obtained with the use of H2O vapor. No selectivity was observed with e ither source for either substrate. The deposited films were fully char acterized using XRD, LVSEM, SAXPS, and RBS.