CHARACTERIZATION OF PT THIN-FILMS DEPOSITED BY METALLORGANIC CHEMICAL-VAPOR-DEPOSITION FOR FERROELECTRIC BOTTOM ELECTRODES

Pure platinum films were deposited onto SiO2 (100 nm)/Si using MeCpPtM e3 and oxygen by metallorganic chemical vapor deposition. Platinum dep osition was controlled by gas-phase mass transfer with an apparent act ivation energy of 2.2 kcal mol(-1) within the temperature range 300 to 450 degrees C. Hole formation at grain edges depended on the depositi on temperature and the oxygen now rates which increased film resistivi ty. Uniform platinum films without holes could be obtained at oxygen f low rate of 40 seem and a deposition temperature of 350 degrees C. A p latinum bottom electrode deposited at 300 degrees C showed a stable an d uniform state after deposition of SrBi2Ta2O9 (SBT) ferroelectric thi n films at 600 degrees C by plasma-enhanced metallorganic chemical vap or deposition.