O. Sanogo et Mr. Zachariah, KINETIC-STUDIES OF THE REACTION OF TETRAETHOXYSILANE WITH OXYGEN-ATOMS, Journal of the Electrochemical Society, 144(8), 1997, pp. 2919-2923
The temperature dependent kinetics of the reaction of tetraethoxysilan
e (TEOS) with O atom have been determined by fast flow reactor molecul
ar beam sampling. The rate of constant has the form k = 3.4 x 10 (-11)
exp (-1304 K/T) cm(3) s(-1) over the temperature range 300 to 673 K a
nd similar to that of H atom abstraction from carbon-bonded ethoxy gro
ups. Gas-phase products of the chemistry have been analyzed which sugg
est that following formation of the primary radical, subsequent reacti
ons lead to the formation of R3SiO and/or RnSi(OH)(4-n) (n < 4). These
species are believed to undergo both four center elimination of ethyl
ene and addition reactions to produce Si-O-Si ligands by dehydration.