The Hall effect of homogeneous amorphous Be films of thickness 25-100
nm stabilized with hydrogen impurity is investigated at 10 K<T<50 K. T
he value of Hall coefficient estimated as R-H=+(1.1+/-0.2)x10(-10) m(3
)/C is found to be independent of temperature and sample thickness. Th
is is the first consistently repeatable observation of positive Hall e
ffect in a homogeneous nontransition amorphous metal. The observed eff
ect contradicts the predictions of the theory that the Hall effect in
nontransition amorphous metals must be negative. (C) 1997 American Ins
titute of Physics.