LUMINESCENCE FROM SI SIO2 WITH SI IMPLANTATION/

Silicon single crystals with a SiO2 overlayer of various thicknesses ( 1000-6000 Angstrom) were implanted by 120 and 160 keV Si-ions to doses in a range of (0.5-1.0)x10(17) cm(-2) to study the visible light emis sion in their as-implanted and post-annealed states. An emission band peaked around 2.0 eV was visible in the photoluminescence (PL) spectra of all the as-implanted samples. After post-annealing at 1100 degrees C in a flowing N-2 gas, it was found that a visible band peaked in th e range of 1.7 eV is detectable from all the samples and that the PL i ntensity exhibits a correlation with the oxygen concentration in the i mplanted region. Possible mechanisms responsible for the observed ligh t emission were also discussed.