N. Nakano et al., THE RADICAL TRANSPORT IN THE NARROW-GAP-REACTIVE-ION ETCHER IN SF6 BYTHE RELAXATION CONTINUUM MODEL, JPN J A P 1, 33(4B), 1994, pp. 2223-2230
We have established a selfconsistent modeling of a narrow-gap reactive
ion etcher (N-gap-RIE) with parallel-plate geometry in SF6. Using the
discharge structure of the relaxation continuum model, we have numeri
cally predicted the radical transport to the surface of N-gap-RIE in S
F6 under two different surface reactions. The spatiotemporal profiles
of radicals and neutrals are demonstrated for a long time scale (0-1 s
) at between 0.05 Torr and 1.0 Torr at 13.56 MHz. The estimated etch r
ate of Si wafer with F radicals agrees reasonably well with the previo
us experimental value obtained under a low-power condition. It is stre
ssed from the present result that the ion-molecule reactions for the g
eneration of F radicals as well as the electron impact dissociation of
SF6 are of great importance.