MODELING AND APPLICATION OF SYNCHRONIZATION OF NUCLEATION BY MEANS OFINTERMITTENT RADIANT HEATING

The method of synchronization of nucleation (SN) by means of periodica lly altering the substrate temperature has been studied theoretically by using a simple Monte Carlo simulation model and by applying a reali stic temperature function. SN has also been studied experimentally usi ng reflection high energy electron diffraction (RHEED) intensity oscil lations. Results for SN applied to growth of Si and Si1-xGex on Si(111 ) are presented. Our growth simulations of Si on Si(111) support the e xperimental results that an improved layer-by-layer growth below the s tep flow regime can be obtained using SN.