CYCLOTRON-RESONANCE IN GE LAYERS OF GE1-XSIX-GE STRAINED HETEROSTRUCTURES

Cyclotron resonance of photoexcited carriers in Ge/Ge1-xSix multilayer strained undoped heterostructures (HSs) was investigated for the firs t time. Cyclotron resonance line of positive charge carriers with the effective mass m(c) almost-equal-to 0.07 m0 corresponding to that of h oles in the upper subband in the strained quantum wells in Ge layers w as observed in the absorption and mm-photoconductivity spectra. The pe rsistent photoconductivity is shown to arise after interband illuminat ion owing to the free holes remaining in the sample.