HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI

An enhancement-mode high-mobility p-channel metal-oxide-semiconductor field-effect-transistor (MOSFET) is fabricated on strained Si layer fo r the first time. A biaxially strained thin Si layer is pseudomorphica lly grown on a relaxed GeSi buffer on Si substrate by molecular beam e pitaxy (MBE). MOSFETs are fabricated using conventional Si process tec hnology. It is found that low-field channel mobility of PMOSFET on str ained Si is 50% higher than that of PMOSFET on bulk Si.