CHARACTERISTICS OF INAS EPILAYERS FOR HALL-EFFECT DEVICES GROWN ON GAAS SUBSTRATES BY MBE

Authors
WANG HM ZENG YP FAN TW ZHOU HW PAN D DONG JR KONG MY
Citation
Hm. Wang et al., CHARACTERISTICS OF INAS EPILAYERS FOR HALL-EFFECT DEVICES GROWN ON GAAS SUBSTRATES BY MBE, Journal of crystal growth, 179(3-4), 1997, pp. 658-660
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
179
Issue
3-4
Year of publication
1997
Pages
658 - 660
Database
ISI
SICI code
0022-0248(1997)179:3-4<658:COIEFH>2.0.ZU;2-1
Abstract
InAs thin films with good characteristics were grown on GaAs (0 0 1) s ubstrates by molecular beam epitaxy. Cross-sectional transmission elec tron microscopy indicated that most of the threading dislocations form ed by the interaction of misfit dislocations are annihilated above a s mall thickness. The high electron mobility and small temperature depen dence of InAs epilayers are useful for magnetic sensors which is demon strated by the properties of Hall effect devices.