S. Fujita et al., FABRICATION OF P-TYPE ZN(S)SE LAYERS AND PN JUNCTION LASER STRUCTURESBY MOVPE, Physica status solidi. b, Basic research, 202(2), 1997, pp. 707-715
Growth of p-type ZnSe by metalorganic vapor-phase epitaxy (MOVPE) is d
emonstrated by nitrogen doping with photoassisted growth technique at
350 degrees C followed by thermal annealing. However, more activation
of acceptors by the thermal annealing at higher temperatures; e.g., 50
0 degrees C, is responsible for defect generation. At the present stag
e, annealing at 400 to 450 degrees C is the optimum condition to suppr
ess the defect generation while activating the acceptors. In order to
fabricate a laser structure, n-type and active layers should also be s
table against the annealing damage. Therefore, the growth of these lay
ers was carried out at 400 or 450 degrees C, which is higher than the
standard temperature. The pn junction ZnCdSe/ZnSe/ZnSSe SCH laser stru
cture fabricated by the present technique showed stimulated emission u
nder pulse injection at 77 K.