FABRICATION OF P-TYPE ZN(S)SE LAYERS AND PN JUNCTION LASER STRUCTURESBY MOVPE

Citation
S. Fujita et al., FABRICATION OF P-TYPE ZN(S)SE LAYERS AND PN JUNCTION LASER STRUCTURESBY MOVPE, Physica status solidi. b, Basic research, 202(2), 1997, pp. 707-715
Citations number
22
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
202
Issue
2
Year of publication
1997
Pages
707 - 715
Database
ISI
SICI code
0370-1972(1997)202:2<707:FOPZLA>2.0.ZU;2-1
Abstract
Growth of p-type ZnSe by metalorganic vapor-phase epitaxy (MOVPE) is d emonstrated by nitrogen doping with photoassisted growth technique at 350 degrees C followed by thermal annealing. However, more activation of acceptors by the thermal annealing at higher temperatures; e.g., 50 0 degrees C, is responsible for defect generation. At the present stag e, annealing at 400 to 450 degrees C is the optimum condition to suppr ess the defect generation while activating the acceptors. In order to fabricate a laser structure, n-type and active layers should also be s table against the annealing damage. Therefore, the growth of these lay ers was carried out at 400 or 450 degrees C, which is higher than the standard temperature. The pn junction ZnCdSe/ZnSe/ZnSSe SCH laser stru cture fabricated by the present technique showed stimulated emission u nder pulse injection at 77 K.