GAIN MECHANISMS AND LASING IN II-VI COMPOUNDS

In this paper. we present a microscopic theory for the physical mechan isms giving rise to lasing in II-VI semiconductor media. Both photons and carriers are consistently treated within the same fully quantum me chanical footing by means of nonequilibrium Keldysh Green's function t echniques. The highly excited medium is described in terms of a strong ly Coulomb correlated electron-hole plasma. Numerical results are pres ented for tile emission, absorption and gain characteristics of ZnCdSe -ZnSSe MQWs in good agreement with recent experimental results.