We have shown that the normally forbidden second harmonic generation s
ignal is enhanced drastically when twice tile incident photon energy i
s resonant with the excitation energy of a 2P exciton in ZnSe/GaAs thi
n films. Using this resonant effect end a novel spectroscopic techniqu
e which utilizes a phase-locked laser pulse pair, we have investigated
the dynamical behavior of 2P excitons. The interferogram of exciton p
olarization has a tail of a few picoseconds. Beating structure was obs
erved in tile decay profile. This structure can be explained by polari
zation interference between tile heavy hole and light hole excitons sp
lit by strain. Further, we have studied the fine structure of the 2P e
xciton ill ZnSe films grown on GaAs substrates using this resonance ph
enomenon. Tile 2P exciton line is found to show distinct fine structur
e caused by envelope-hole coupling, in addition to splitting of the ex
citon state due to strain effects.