Low-dimensional II-VI wide-bandgap semiconductor structures are attrac
tive both from basic physics related to excitons and applications to s
hort-wavelength light emitters. In this paper, growth of zincblende Zn
Se/MgS superlattices (SLs) is demonstrated and structural characteriza
tion is performed. Enhanced excitonic properties in this new SL materi
al will be discussed. Exciton localization due to heterointerface fluc
tuations was observed at low temperature and the localization of excit
ons showed high luminescence efficiency. The growth of a CdSe quantum
dot structure, in order to realize the three-dimensional localization
of excitons. was examined. Formation of self-organized CdSe dots was o
bserved on (001)ZnSe surfaces. The long-term stability of the CdSe dot
s is discussed.