POSITRON-ANNIHILATION STUDIES IN CUCL

Citation
H. Aourag et M. Certier, POSITRON-ANNIHILATION STUDIES IN CUCL, Physica status solidi. b, Basic research, 202(2), 1997, pp. 951-959
Citations number
40
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
03701972
Volume
202
Issue
2
Year of publication
1997
Pages
951 - 959
Database
ISI
SICI code
0370-1972(1997)202:2<951:PSIC>2.0.ZU;2-L
Abstract
Electron-positron momentum densities in CuCl are calculated along two different crystallographic directions [001] and [110] with the use of the empirical pseudopotential method (EPM) coupled with the independen t particle method (IPM). The results exhibit features that are complet ely different from those observed in other III-V semiconductors. The d ip and valley observed in III-V compounds are replaced by peaks. These differences are attributed to the very shallow ''d'' states in copper .