Jg. Cederberg et al., OXYGEN-RELATED DEFECTS IN LOW PHOSPHORUS-CONTENT GAAS1-YPY GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY, Journal of applied physics, 82(5), 1997, pp. 2263-2269
The mixed Group V ternary alloy GaAs1-yPy (y<0.17) has been grown by m
etal organic vapor phase epitaxy and doped with oxygen using the oxyge
n precursor, diethylaluminum ethoxide [C2H5OAl(C2H5)(2)]. Controlled o
xygen doping was accomplished over the range of 0<y<0.17. Deep level t
ransient spectroscopy measurements reveal the presence of several oxyg
en-related deep levels. These levels, previously found in GaAs:O, vary
with alloy composition over the investigated range. An additional dee
p level, most probably associated with the presence of misfit-related
defects, has been identified. Photoluminescence performed on the oxyge
n-doped samples indicates that band edge emission is reduced and lower
energy emission features are introduced over the wavelength range of
1000-1200 nm as a result of oxygen incorporation. (C) 1997 American In
stitute of Physics.