OXYGEN-RELATED DEFECTS IN LOW PHOSPHORUS-CONTENT GAAS1-YPY GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

The mixed Group V ternary alloy GaAs1-yPy (y<0.17) has been grown by m etal organic vapor phase epitaxy and doped with oxygen using the oxyge n precursor, diethylaluminum ethoxide [C2H5OAl(C2H5)(2)]. Controlled o xygen doping was accomplished over the range of 0<y<0.17. Deep level t ransient spectroscopy measurements reveal the presence of several oxyg en-related deep levels. These levels, previously found in GaAs:O, vary with alloy composition over the investigated range. An additional dee p level, most probably associated with the presence of misfit-related defects, has been identified. Photoluminescence performed on the oxyge n-doped samples indicates that band edge emission is reduced and lower energy emission features are introduced over the wavelength range of 1000-1200 nm as a result of oxygen incorporation. (C) 1997 American In stitute of Physics.