ELECTRICAL-PROPERTIES OF N-GASE SINGLE-CRYSTALS DOPED WITH CHLORINE

Hall-effect and space-charge-limited-current (SCLC) measurements were performed on Cl-doped GaSe single crystals grown by the Bridgmann-Stoc kbarger method. The temperature dependence of the free electron densit y shows the characteristics of a partially compensated n-type semicond uctor. The electrical properties are dominated by a deep donor level a t about 0.57 eV below the conduction band. An electron trapping level between 0.56 and 0.62 eV below the conduction band has been observed b y SCLC measurements. The trapping level concentration depends on the a mount of dopant. Finally, the conduction band density-of-states effect ive mass was estimated to be 1.1 m(0). (C) 1997 American Institute of Physics.