PROFILING OF ELECTRICAL DOPING CONCENTRATION IN FERROELECTRICS

In this paper, the extraction of doping profiles in ferroelectric thin -film capacitors using ferroelectric capacitance-voltage (CV) measurem ents is studied. For a ferroelectric field-dependent permittivity mode l, the doping profile relation to measured CV curves for ferroelectric thin-film capacitors is found to be analogous to the well-known resul t of metal-semiconductor Schottky junctions with an easily determined effective dielectric constant. Computer simulation shows the electrica l doping concentration of ferroelectric thin-film capacitors can be pr ofiled accurately with the proposed model. Limitations of the model ar e investigated. (C) 1997 American Institute of Physics.