A treatment that lowers the threshold field for field emission and inc
reases the emission site density from a nominally n-type diamondlike c
arbon film is described, The film was deposited using an rf plasma of
methane and nitrogen gases. The treatment involved deposition of cesiu
m followed by a low temperature anneal, Field emission measurements we
re used to characterize the threshold field and emission site density
before and after cesium treatment. Ultraviolet photoemission was used
to study the effect of cesium on the work function. Dramatic improveme
nts Co held emission by cesiation cannot be generalized to all diamond
like samples, as similar treatment of a type IIb single-crystal (p-typ
e) diamond did not produce as pronounced an improvement in turn-on fie
ld or emission site density. (C) 1997 American Institute of Physics.