Yw. Ko et Si. Kim, ELECTRON-EMISSION AND STRUCTURE PROPERTIES OF CESIATED CARBON-FILMS PREPARED BY NEGATIVE CARBON ION-BEAM, Journal of applied physics, 82(5), 1997, pp. 2631-2635
The work function, field emission property (turn-on field), and Auger
electron spectroscopy of cesiated carbon films on Si (100) have been i
nvestigated for codeposition of Cs neutral and C- ion beams at differe
nt energies (25-150 eV). The higher energy (150 eV) C- ion beam produc
es the lower work function surface (1.1 eV) as well as sp(3) rich carb
on film. The work function depends both on cesium concentration as wel
l as on the sp(3) fraction in the carbon films. The turn-on field of t
he film can be as low as 7 V/mu m. The thermal stability of the low wo
rk function surface has been investigated for postdeposition annealing
up to 600 degrees C. An extremely high stability cold cathode has bee
n made by forming cesium carbide. (C) 1997 American Institute of Physi
cs.