RAMAN-SCATTERING STUDY OF SURFACE BARRIERS IN GAAS PASSIVATED IN ALCOHOLIC SULFIDE SOLUTIONS

Authors
BESSOLOV VN LEBEDEV MV ZAHN DRT
Citation
Vn. Bessolov et al., RAMAN-SCATTERING STUDY OF SURFACE BARRIERS IN GAAS PASSIVATED IN ALCOHOLIC SULFIDE SOLUTIONS, Journal of applied physics, 82(5), 1997, pp. 2640-2642
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
82
Issue
5
Year of publication
1997
Pages
2640 - 2642
Database
ISI
SICI code
0021-8979(1997)82:5<2640:RSOSBI>2.0.ZU;2-B
Abstract
Raman scattering has been used to study the variation of surface barri ers In GaAs due to sulfur passivation in solutions of ammonium sulfide [(NH4)(2)S] in different alcohols (ethanol, isopropanol, and tert-but anol). It has been found that the surface barrier height and the deple tion layer width decrease considerably with the decrease of the dielec tric constant of the passivating solution. (C) 1997 American Institute of Physics.