DIMENSION SCALING OF 1 F NOISE IN THE BASE CURRENT OF QUASISELF-ALIGNED POLYSILICON EMITTER BIPOLAR JUNCTION TRANSISTORS/

Experimental results on low frequency noise in quasiself-aligned bipol ar n-p-n junction transistors, with widely varying emitter/base juncti on dimensions are presented and compared with former results obtained on devices of the same type. The power spectral density of base curren t fluctuations was found to depend linearly on the inverse of the area of the emitter/base interface junction, implying localization of the low frequency noise sources on the interface, rather than on the trans istor perimeter. An application of current-to-voltage converters for s tudies of current fluctuations is also discussed and compared with a m ore conventional technique. (C) 1997 American Institute of Physics.