USE OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS IN THE ANALYSIS OF LOW-TEMPERATURE EPITAXIAL SI FILMS DEPOSITED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION

This article discusses the electrical characterization of low-temperat ure intrinsic Si films deposited by remote plasma-enhanced chemical va por deposition. Metal-oxide-semiconductor (MOS) capacitors were fabric ated on films deposited over a range of temperatures. Conventional MOS measurements such as capacitance versus voltage, breakdown voltage, Z erbst plot, and charge-to-breakdown were used to analyze the capacitor s. The results of these measurements not only yielded information abou t the electrical properties of the films, but also led to conclusions regarding structural quality and the presence of metal contamination. This, coupled with the fact that capacitor fabrication requires only a simple, moderate-thermal budget process, makes MOS capacitor measurem ents an attractive technique for the characterization of low temperatu re epitaxial Si films. (C) 1997 American Institute of Physics.