HARMONIC-GENERATION LIMITATIONS IN GAIN-SWITCHED SEMICONDUCTOR-LASERSDUE TO DISTRIBUTED MICROWAVE EFFECTS

Authors
SUM KC GOMES NJ
Citation
Kc. Sum et Nj. Gomes, HARMONIC-GENERATION LIMITATIONS IN GAIN-SWITCHED SEMICONDUCTOR-LASERSDUE TO DISTRIBUTED MICROWAVE EFFECTS, Applied physics letters, 71(9), 1997, pp. 1154-1155
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
9
Year of publication
1997
Pages
1154 - 1155
Database
ISI
SICI code
0003-6951(1997)71:9<1154:HLIGS>2.0.ZU;2-8
Abstract
A large-signal, time domain semiconductor laser model that incorporate s propagation effects within the cavity and a microwave circuit simula tor are used to investigate distributed microwave effects on gain-swit ching performance. It is shown that the position of the feed point to the top electrode can have a significant influence on the harmonic con tent of the generated pulses, which is an important consideration in m icrowave/millimeter-wave signal generation schemes. (C) 1997 American Institute of Physics.