MECHANISM FOR ORDERING IN SIGE FILMS WITH RECONSTRUCTED SURFACE

Authors
ARAKI T FUJIMURA N ITO T
Citation
T. Araki et al., MECHANISM FOR ORDERING IN SIGE FILMS WITH RECONSTRUCTED SURFACE, Applied physics letters, 71(9), 1997, pp. 1174-1176
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
9
Year of publication
1997
Pages
1174 - 1176
Database
ISI
SICI code
0003-6951(1997)71:9<1174:MFOISF>2.0.ZU;2-M
Abstract
A model of the ordering mechanism in SiGe films is developed to explai n the occurrence of two types of ordered structures, We investigate th e stability of ordered structures by strain energy calculation. It is suggested that atomic diffusion, which is enhanced by strain in a film , influences the formation of ordered structures, The process of atomi c exchange that forms the ordered structure at a reconstructed surface during growth is also discussed. (C) 1997 American Institute of Physi cs.