HIGHLY SPATIALLY-RESOLVED X-RAY-ANALYSIS OF SEMICONDUCTOR ALLOYS AND NANOSTRUCTURES IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE

Authors
BANGERT U HARVEY AJ DIEKER C HARTMANN A KEYSE R
Citation
U. Bangert et al., HIGHLY SPATIALLY-RESOLVED X-RAY-ANALYSIS OF SEMICONDUCTOR ALLOYS AND NANOSTRUCTURES IN A SCANNING-TRANSMISSION ELECTRON-MICROSCOPE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(6), 1996, pp. 1421-1437
Citations number
17
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter","Metallurgy & Metallurigical Engineering
Journal title
Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties → ACNP
ISSN journal
13642804
Volume
74
Issue
6
Year of publication
1996
Pages
1421 - 1437
Database
ISI
SICI code
1364-2804(1996)74:6<1421:HSXOSA>2.0.ZU;2-W
Abstract
X-ray analysis in a high-resolution scanning transmission electron mic roscope is carried out on III-V compound and SixGe1-x quantum wells an d quantum wires. Simulated X-ray profiles were obtained by convolving the electron beam profile with a composition function. From best fits with experimental data, quantitated composition profiles can be obtain ed with nanometre resolution. Compositions in wells and wires are inho mogeneous. Ahoy clusters tend to form in III-V compound quaternary qua ntum well stacks. SixGe1-x quantum wells on patterned substrates show strong compositional asymmetries along the growth direction and so do quantum wires in both materials systems. In the case of the SixGe1-x s ystem, aspects of the growth dynamics which lead to the observed compo sitional behaviour are deduced.