ZNSE EPITAXY AN A GAAS(110) SURFACE

ZnSe molecular beam epitaxial growth on GaAs(110) substrates has been studied using reflection high-energy electron diffraction (RHEED), ato mic force microscopy, and transmission electron microscopy. An atomica lly Rat and low defect homoepitaxial buffer GaAs(110) was grown with h igh V/III ratio (greater than or equal to 150) and at low growth tempe rature (similar to 430 degrees C). At the beginning of ZnSe growth on a GaAs(110) buffer epitaxial layer, RHEED oscillation was observed and no facet was seen on a pseudomorphic ZnSe(110) surface. Low defect Zn Se films (defect density less than or equal to 10(5) cm(-2)) were also obtained without the Zn preexposure process necessary for low defect ZnSe(001) growth. (C) 1997 American Institute of Physics.