1.54 MU-M PHOTOLUMINESCENCE OF ER3-FILMS CONTAINING SI NANOCRYSTALS -EVIDENCE FOR ENERGY-TRANSFER FROM SI NANOCRYSTALS TO ER3+( DOPED INTOSIO2)

SiO2 films containing Si nanocrystals (nc-Si) and Er were prepared and their photoluminescence (PL) properties were studied, The samples exh ibited luminescence peaks at 0.81 and 1.54 mu m, which could be assign ed to the electron-hole recombination in nc-Si and the intra-4f transi tion in Er3+, respectively. Correlation between the intensities of the two luminescence peaks was studied as functions of Er concentration a nd excitation power, The present results clearly demonstrate that exci tation of Er3+ occurs through the recombination of photogenerated carr iers spatially confined in nc-Si and the subsequent energy transfer to Er3+. (C) 1997 American Institute of Physics.