A method is developed for determining interface profiles of extreme ul
traviolet-(EUV-) layered synthetic microstructures (LSM's). It is base
d on computer processing digitized LSM electron micrographs. This stud
y was carried out on a tungsten/carbon multilayer. Interfacial roughne
ss has been characterized by means of two statistical parameters, i.e.
, the root mean square (rms) roughness height and the autocorrelation
length cr. Additionally, knowledge of interface profiles should enable
one to study more accurately the structural behavior of the stack, fr
om the substrate to the top, and, in turn, help one better understand
its EUV optical properties. (C) 1991 Optical Society of America.