INFLUENCE OF STRAIN AND REPEATED ANNEALING ON INTERFACE MIXING IN ANNEALED CDTE CDMNTE QUANTUM-WELLS/

We use the magnetooptical method of interface characterisation to stud y Mn diffusion caused by annealing of CdTe quantum wells with CdMnTe b arriers. To investigate influence of strain in the sample on the diffu sion process we anneal structures grown pseudomorphically on thick buf fers of different lattice constant. Our results show that the strain i n the quantum well strongly enhances diffusion of Mn2+ ions into the q uantum well during annealing. Measurements of samples annealed twice s how a strong enhancement of the diffusion efficiency during the second process. (C) 1997 Published by Elsevier Science Ltd.