DEPENDENCE OF THE PHOTOCURRENT ON A BIAS OF A P-INP N-CDS HETEROJUNCTION FORMED BY LASER-ABLATION/

Authors
ULLRICH B DUSHKINA NM EZUMI H KEITOKU S KOBAYASHI T
Citation
B. Ullrich et al., DEPENDENCE OF THE PHOTOCURRENT ON A BIAS OF A P-INP N-CDS HETEROJUNCTION FORMED BY LASER-ABLATION/, Solid state communications, 103(11), 1997, pp. 635-637
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
103
Issue
11
Year of publication
1997
Pages
635 - 637
Database
ISI
SICI code
0038-1098(1997)103:11<635:DOTPOA>2.0.ZU;2-V
Abstract
Photocurrent of a p-InP/n-CdS heterodiode realized by laser ablation w as studied in the range of 450-900 nm at 77 and 300 K. The photocurren t increases exponentially by applying a forward and reverse bias. The results, which cannot be achieved with common pn-junctions, are interp reted by carrier injection into the InP/CdS interface. (C) 1997 Elsevi er Science Ltd.