A localization model comprising spin disorder and nonmagnetic randomne
ss is presented to account for novel magnetotransport properties in Mn
oxides R(1-x)A(x)MnO(3). Localization length of electrons as a functi
on of magnetization is determined by means of the transfer matrix meth
od. Including the Coulomb interaction between electrons, the variable-
range hopping resistivity is calculated as a function of temperature a
nd magnetic field. The resulting sharp resistivity peak near the Curie
temperature and, in particular, the magnitude of the colossal negativ
e magnetoresistance are in good agreement with experimental measuremen
ts.