THERMAL-STABILITY OF AL-1-PERCENT-SI-0.5-PERCENT-CU TISI2 CONTACT STRUCTURE/

Stable TiSi2 was formed by rapid thermal annealing (RTA) on single-cry stal Si. Subsequently a 600 nm-thick Al-1%Si-0.5%Cu layer was deposite d on the top of the formed TiSi2 followed by furnace annealing for 30 min at 400-600-degrees-C in N2 ambient atmosphere. The thermal stabili ty of Al-1%Si-0.5%Cu/TiSi2 bilayer and interfacial reaction were inves tigated by employing four-point probe, scanning electron microscopy (S EM) and Auger electron spectroscopy (AES). The composition and the pha se of precipitates formed by the reaction of Al-1%Si-0.5%Cu with TiSi2 were studied by energy dispersive spectroscopy (EDS) and X-ray diffra ction (XRD). It was found that the TiSi2 layer was consumed by the rea ction between TiSi2 and Al-1%Si-0.5%Cu layer, resulting in precipitate s at 550-degrees-C. The results from EDS revealed that the precipitate s were composed of Ti, Al and Si. The precipitates were identified as Ti7Al5Si12 ternary compound from XRD analysis.