CMOS FULLY DIGITAL INTEGRATED PRESSURE SENSORS

Most commercially available silicon pressure transducers are based on a Wheatstone bridge configuration and give an analogue output signal. These devices are generally very sensitive to noise and require compli cated circuits (by using passive components) for temperature and non-l inearity compensation. This limits the transducer accuracy and increas es the calibration cost. To overcome these problems, a new generation of pressure transducers with digital output, based on MOSFET ring osci llators, has been developed. A fully digital integrated pressure senso r and data-acquisition procedures will be presented.