BOND-QUALITY CHARACTERIZATION OF SILICON-GLASS ANODIC BONDING

Authors
TATICLUCIC S AMES J BOARDMAN B MCINTYRE D JARAMILLO P STARR L LIM MH
Citation
S. Taticlucic et al., BOND-QUALITY CHARACTERIZATION OF SILICON-GLASS ANODIC BONDING, Sensors and actuators. A, Physical, 60(1-3), 1997, pp. 223-227
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
60
Issue
1-3
Year of publication
1997
Pages
223 - 227
Database
ISI
SICI code
0924-4247(1997)60:1-3<223:BCOSAB>2.0.ZU;2-1
Abstract
A simple testing method is presented that allows the comparison of the bond quality for anodically bonded wafers, An array of parallel metal lines of predetermined thickness is formed on a glass wafer. The esti mation of the bond quality can be performed by visual inspection after the bonding. This method enables comparison of the anodic-bonding pro cess performance for different glasses, for intermediate layers and va rious bonding conditions. The optimization of silicon-glass anodic bon ding with an intermediate phosphosilicate glass (PSG) layer is shown u sing this technique.