FIELD-INDUCED ITINERANT METAMAGNETISM IN IRON MONOSILICIDE

Influence of high magnetic fields and pressure on hand structure of Fe Si has been studied by the full-potential LMTO-ASA method. It is found that the semiconducting ground state of FeSi is stable in the wide vo lume range of +/-15% of V/V-exp. At the same time, as follows from the LSDA calculations, the applied external magnetic fields induce the me tallic magnetic state. At low fields our results agree with the measur ed magnetization. There is sleep increase of calculated magnetization at high critical field H-cr = 170 T (itinerant metamagnetic transition ).