PVT AND CVT GROWTH AND CHARACTERIZATION OF SNSXSE2-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-2) SINGLE-CRYSTALS

Authors
PATEL DH PATEL RG ARORA SK AGARWAL MK
Citation
Dh. Patel et al., PVT AND CVT GROWTH AND CHARACTERIZATION OF SNSXSE2-X (0-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-2) SINGLE-CRYSTALS, Crystal research and technology, 32(5), 1997, pp. 701-706
Citations number
9
Categorie Soggetti
Crystallography
Journal title
Crystal research and technology → ACNP
ISSN journal
02321300
Volume
32
Issue
5
Year of publication
1997
Pages
701 - 706
Database
ISI
SICI code
0232-1300(1997)32:5<701:PACGAC>2.0.ZU;2-N
Abstract
Single crystals of solid solutions of tin sulphoselenide have been gro wn in the same ampoule. Specific conditions for growing single crystal s of SnSSe have also been identified. A study of microstructures on th e growth surfaces responds to the mechanism of growth oi these crystal s. The dependence of electrical resistivity, Hall mobility, carrier co ncentration with the values of the configuration parameter x has been studied.