ON THE CONDUCTION MECHANISM AND THERMOELECTRIC PHENOMENA IN IN6S7 LAYER CRYSTALS

In the present paper, measurements of the electrical conductivity and Hall coefficient on single crystal of In6S7, grown by a new crystal gr owth technique, were done. The crystal was found to be of n-type condu ctivity. The low conductivity sample showed as the most striking featu re an exponential increase of the Hall mobility with temperature. This effect was explained by assuming a mixed conduction and different sca ttering mechanisms for electrons and holes in the same temperature ran ge. Also we have made thermoelectric power measurements to support thi s assumption. An energy gap of 0.64 eV was found.