ANALYTICAL MODEL TO DETERMINE THE GATE LEAKAGE CURRENT IN IN0.52AL0.48AS INXGA1-XAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORSCAUSED BY THERMIONIC FIELD-EMISSION/

The gate leakage current of pulse doped In0.52Al0.48As/InxGa1-xAs pseu domorphic modulation doped field-effect transistors (MODFETs) is analy sed by thermionic field emission theory. For the first time, a theoret ically based investigation of the leakage current for this type of dev ice is carried out. The influence of parameters of the layer structure design on the gate leakage current such as the thickness of the barri er layer or the doping concentration in the supply layer is predicted. The model adequately predicts the experimental decrease in leakage cu rrent with increased thickness of the barrier layer and reduced doping concentration.