DECAY BEHAVIOR OF LIGHT-INDUCED ESR IN HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS

Authors
ZHANG JY KUMEDA M SHIMIZU T
Citation
Jy. Zhang et al., DECAY BEHAVIOR OF LIGHT-INDUCED ESR IN HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS, JPN J A P 1, 33(4A), 1994, pp. 1831-1832
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
33
Issue
4A
Year of publication
1994
Pages
1831 - 1832
Database
ISI
SICI code
Abstract
Light-induced ESR signals created by short-time illumination in Si-ric h hydrogenated amorphous silicon-nitrogen films do not completely disa ppear after cessation of illumination. The remaining fraction of light -induced ESR spin density increases with increasing illumination time and illumination intensity, suggesting that a structural change procee ds with illumination.