DIFFUSION LENGTH OF HOLES IN N-ZNSE MEASURED BY SCHOTTKY-BARRIER PHOTOVOLTAGE METHOD

The diffusion length (L) of holes in undoped n-type ZnSe has been meas ured by using the Schottky barrier photovoltage method. The samples me asured were single crystals and epitaxial layers which were prepared b y metalorganic chemical vapor deposition. The values of L were 1 mum f or single crystals and 0.15 mum for epilayers. The lifetimes estimated from those values were 4.5 ns and 0.10 ns, respectively,